http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130058234-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 |
| filingDate | 2011-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b6f90b5c022008dd549b392c0cc40ad |
| publicationDate | 2013-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20130058234-A |
| titleOfInvention | Light emitting device amd light emitting device package including the same |
| abstract | PURPOSE: A light emitting device and a light emitting device package including the same are provided to improve the recombination of holes with electrons by increasing the mobility of the holes moving from a second conductive semiconductor layer to an active layer. CONSTITUTION: An active layer(134) is arranged on a first conductive semiconductor layer. An electron barrier layer(150) and a second conductive semiconductor layer(136) are arranged on the active layer. A recess(P) is formed in the boundary surface of the second conductive semiconductor layer and the electron barrier layer. The height of the recess is 10 to 15 nm. The electron barrier layer has a thickness of 40 to 60 nm. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160121837-A |
| priorityDate | 2011-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.