| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f932d94618d9b875e401457b33e9761 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-26 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-10 |
| filingDate |
2011-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49f9ffe1f2b7ccc194eee5ee05e2c2a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d82ff963c344a550f56f3ffc71fba10a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f390ba9e0592666097d96d746aa1711b |
| publicationDate |
2013-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20130049503-A |
| titleOfInvention |
Etching solution composition for a tungsten layer and method for etching the tungsten layer using the same |
| abstract |
PURPOSE: An etching solution composition for a tungsten layer and a method for etching the tungsten layer using the same are provided to selectively etch metals to manufacture a semiconductor device because an etching solution etches tungsten, but prevents the etching of titanium nitride. CONSTITUTION: An etching solution composition for a tungsten layer is composed of 5-15 wt.% of nitric acid, 2-10 wt.% of sulfonic acid, 0.1-5 wt.% of one or more among poly carboxylic acid polymer and salt thereof, and the rest of deionized water. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110272742-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11499236-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3540764-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019165225-A |
| priorityDate |
2011-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |