http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130044124-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_529ddecfdb5a5bcd7a5eeb89b04f8e9a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02675 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1281 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02683 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2010-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9cf2b3fe44b4009ed9b2b785352e114 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4e97ecc0c76c9514c826874454d51e7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98a98f17b955d5a772e89ff98e554708 |
| publicationDate | 2013-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20130044124-A |
| titleOfInvention | Method for producing crystalline semiconductor film, substrate having crystalline semiconductor film, thin film transistor |
| abstract | A method for producing a crystalline semiconductor film having a crystal structure with good in-plane uniformity is provided. A first step of irradiating the amorphous semiconductor film with a continuous oscillation laser light having a continuous light intensity distribution convex upward in a short axis and a long axis so that the temperature of the amorphous semiconductor film is in the range of 600 ° C to 1100 ° C; The second step in which the amorphous semiconductor film is crystallized corresponding to the temperature range of 600 ° C. to 1100 ° C., and the predetermined temperature in the plane of the amorphous semiconductor film are crystallized by the irradiation of the continuous oscillation laser light. And a third step of increasing the crystal grain size of the amorphous semiconductor film that is crystallized in response to a temperature range of 1100 ° C to 1414 ° C by the latent heat generated. The distribution has a region range that becomes greater than or equal to a predetermined intensity in the major axis direction, and the region range is 1100 ° C. to 1414 ° C. by latent heat. It corresponds to the area | region on the amorphous semiconductor film which becomes the range. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20230082837-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130035116-A |
| priorityDate | 2010-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.