| abstract |
The semiconductor device includes a fin field effect transistor (FinFET) having shaped fins and regular fins. The shaped pin has an upper portion that can be smaller, larger, thinner or shorter than the upper portion of the regular pin. The lower part of the shaped pin and the regular pin are identical. The FinFET may have only one or more shaped fins, or only one or more regular fins, or a mixture of shaped and regular fins. A semiconductor fabrication process for shaping one fin includes forming a photolithographic opening of one fin, selectively doping a portion of the fin, and etching a portion of the fin. |