| abstract |
The present invention discloses a method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon doped silicon nitride, carbon deposited silicon oxide and carbon doped oxynitride films at low deposition temperatures. Silicon-containing precursors used for deposition are monochlorosilane (MCS) and monochloroalkylsilane. The method is preferably carried out using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced periodic chemical vapor deposition. |