| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c8401bd1a86a10d5508942a53475fc38 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73204 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D17-001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D3-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-00 |
| filingDate |
2011-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b875b7544bd3bbbdce2d96b47d081559 |
| publicationDate |
2013-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20130036067-A |
| titleOfInvention |
Method of Electrodepositing Copper Chip-to-Chip, Chip-to-Wafer, and Wafer-to-Wafer Interconnect on Silicon Through Electrode (TSS) Using a Heated Substrate and Cooled Electrolyte |
| abstract |
The present invention provides a chuck controlled to hold a silicon substrate and heat the silicon substrate to a first temperature, and a temperature control device for maintaining the temperature of the electrolytic cell at a second temperature (the first temperature is about 30 ° C. to Wherein the second temperature is at least 5 ° C. below the first temperature and (b) is maintained at a temperature in the range of about 15 ° C. to about 35 ° C.). In a high aspect ratio via of a silicon substrate to form through-silicon vias (TSV) using an electrolytic bath comprising a redox mediator The present invention relates to a method for electrodepositing a metal into a metal sheet. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210033061-A |
| priorityDate |
2010-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |