http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130035229-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcc0b66123940d1b32783569ebfa2d45 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B44C1-227 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2012-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07458a857328a0caff5612a65cc43005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42a41c5c966e2dedc23a015b4c82004e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fafb543f8d1f57c5cd24b73b642d646 |
| publicationDate | 2013-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20130035229-A |
| titleOfInvention | Pattern Formation Method |
| abstract | [PROBLEMS] An object of the present invention is to provide a pattern formation method which can easily remove a resist underlayer film after an etching step while suppressing the influence on a substrate such as a low dielectric material. [Method] The present invention provides a process for forming a resist underlayer film on the upper surface side of a substrate using (a) a composition for forming a resist underlayer film containing a calix arene-based compound, and (b) an upper surface of the resist underlayer film. Forming a resist pattern on the side; (c) forming a pattern on the substrate by dry etching at least the resist underlayer film and the substrate using the resist pattern as a mask; A step of removing the resist underlayer film on the processed substrate with a basic solution in this order, further comprising the step of heating or acid treating the resist underlayer film before the step (d), the aromatic ring or hetero It is the pattern formation method which the group represented by following General formula (i) couple | bonds with at least one part of an aromatic ring. |
| priorityDate | 2011-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 103.