| abstract |
The present invention provides a gas barrier film having excellent cutting performance with high barrier performance, bending resistance and smoothness, and provides an organic photoelectric conversion device using the same. This gas barrier film has a gas barrier layer unit 5 on at least one surface side of the base material 2, the first barrier layer 3 in which the gas barrier layer unit 5 is formed by a chemical vapor deposition method, and the first The coating film formed by apply | coating the silicon compound on the barrier layer 3 has the 2nd barrier layer 4 with which the modification process was performed, The said 2nd barrier layer 4 is a non-modified area | region 4B on the said substrate surface side. It is characterized by having 4 A of modified regions in the surface layer side. |