| abstract |
According to the present invention, in photolithography using high-energy rays such as ArF excimer laser light as a light source, the present invention has excellent resolution, in particular, depth of focus (DOF) characteristics, and particularly high rectangularity with excellent roundness in forming a contact hole pattern. Provided are a positive resist composition capable of imparting a pattern and a pattern forming method using the positive resist composition. (A) The repeating unit represented by the following general formula (1-1), the repeating unit represented by the following general formula (1-2), and the repeating unit having an acid labile group, represented by the following formulas (a-1) to (a-3) A resin comprising at least one repeating unit of) and at least one repeating unit of the formulas (b-1) and (b-2), wherein alkali solubility is improved by an acid, (B) a photoacid generator, It is a positive resist composition characterized by containing (C) basic compound and (D) solvent. |