| abstract |
The semiconductor device includes a semiconductor chip bonded to the substrate 122 and a base plate bonded to the substrate 122. The base plate includes a first metal layer 108 clad with the second metal layer 106. The second metal layer 106 is deformed to provide a fin-shell or fin cooling structure 112. The second metal layer 106 has a sublayer 113 having no fins and no fin-pin. The first metal layer 108 has a first thickness d108, and the sublayer 113 has a second thickness d113. The ratio between the first thickness d108 and the second thickness d113 is at least 4: 1. |