| abstract |
Between β-type having a firing step of firing a raw material of β-sialon mixed with silicon nitride, aluminum nitride, at least one of aluminum oxide or silicon oxide, and an optically active element compound at a temperature of 1820 ° C or higher and 2200 ° C or lower. As a manufacturing method of an alon, in the baking process, the several boron nitride container is arrange | positioned in a graphite box so that the raw material of (beta) type sialon filled in the some boron nitride container may contact with nitrogen gas, By baking in nitrogen atmosphere, carbon content is reduced and the novel (beta) type sialon which has high luminescence intensity is obtained. |