| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d0693ed4f2b7b1fab97515ac2f1f311c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-03849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05611
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01327
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01029
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-08503
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3651
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0401 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C28-021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-13 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate |
2012-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00a11834086c3bd24ca1312533df7d91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81424730c3480b34c1ab4e605e00454c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d6e3efef1770c32bd0fd02cb76d00f2 |
| publicationDate |
2013-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20130018542-A |
| titleOfInvention |
How to inhibit the growth of intermetallic compounds |
| abstract |
The present invention comprises the following steps: (i) preparing a substrate element comprising a substrate having at least one metal pad layer laminated thereon and at least one solder thin film deposited on the metal pad layer; Performing; And (ii) further depositing a solder bump having a suitable thickness on the substrate element, the method comprising the step of inhibiting the growth of the intermetallic compound, wherein the metal in the solder thin film and the metal pad after proper heat treatment of the solder thin film The intermetallic compound thin film is formed by the reaction. In the present invention, the formation of the intermetallic compound thin film can slow the growth of the intermetallic compound and prevent the transformation of the intermetallic compound. |
| priorityDate |
2011-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |