| abstract |
The embodiment includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, wherein the active layer is formed between the first conductive semiconductor layer and the second conductive semiconductor layer. A light emitting device comprising a plurality of well layers and at least one barrier layer, wherein the well layer includes at least one insertion layer, and the insertion layer has a larger energy band gap than the well layer and has a thickness of 10 Å or less. To provide. |