| abstract |
Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system. A light emitting device according to an embodiment includes a first conductive semiconductor layer; An active layer on the first conductivity type semiconductor layer; An electron blocking layer on the active layer; And a second conductive semiconductor layer on the electron blocking layer, wherein the electron blocking layer comprises p-Al x Ga 1 -x N (0 <x≤1) doped with p-type, and the p The Al x Ga 1 - x N electron blocking layer is a bulk layer, and may include a plurality of regions having different Al compositions from the electron blocking layer. |