| abstract |
Disclosed are a photoresist stripping composition and a method of manufacturing a thin film transistor substrate using the same, which can improve the reliability and productivity of a manufacturing process. The composition for peeling photoresist is 1% to 10% by weight of tetramethyl ammonium hydroxide (TMAH), 1% to 10% by weight of alkanolamine, dimethylene glycol monomethyl ether monomethyl ether (MDG) 50% to 70% by weight, 20% to 40% by weight of N-methyl-2-pyrrolidone (NMP), 0.01% to 1% by weight of triazole-based compound % And excess solvent. Accordingly, the photoresist pattern or the organic film can be easily removed, the corrosion of the lower metal film can be minimized, and the time taken for removal can be shortened. |