| abstract |
The present invention relates to an etching solution composition of a copper film / titanium film, more specifically 5 to 20% by weight persulfate; 0.01 to 2% by weight of a fluorine compound; 0.001 to 3 weight percent of a chlorine compound; 1 to 10% by weight of inorganic acid, salts thereof or mixtures thereof; 0.3 to 5% by weight of the cyclic amine compound; 1 to 10% by weight of organic acid, salt thereof or mixture thereof; 0.1 to 5% by weight of p-toluenesulfonic acid; And the remaining amount of water, the storage stability is excellent, and multiple metal films composed of copper film and titanium film can be uniformly etched at a high etching rate, thereby simplifying the etching process and improving productivity as well as providing excellent etching characteristics. The etching liquid composition of the copper film / titanium film which can be performed. |