http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130007437-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6708 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 2012-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9cc9ccffa31b8a092f6edd7dcb7a989 |
| publicationDate | 2013-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20130007437-A |
| titleOfInvention | Etching method and etching liquid used for this, manufacturing method of semiconductor substrate product using this |
| abstract | The present invention enables selective wet etching that preferentially dissolves a layer containing Ti, and also enables the etching method capable of effectively cleaning and removing residues generated by etching and ashing, the etching solution used for the semiconductor, and the semiconductor using the same. Provided are methods for producing a substrate product. A method of applying a specific etching solution to a semiconductor substrate having a first layer comprising Ti and a second layer comprising at least one of Cu, SiO, SiN, SiOC, and SiON, and selectively etching the first layer. The specific etching liquid contains the basic compound which consists of organic amine compounds, and an oxidizing agent in an aqueous medium, and the pH is 7-14. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160048087-A |
| priorityDate | 2011-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 71.