http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130006954-A

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filingDate 2011-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2013-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20130006954-A
titleOfInvention Inorganic semiconductor sensitive photoelectric device and manufacturing method thereof
abstract The present invention relates to a photovoltaic device having a novel structure, which has a high efficiency and can be mass-produced with a low cost raw material, thereby making it easy to commercialize the photoelectric device. Specifically, an optoelectronic device comprising a dithiol-type tong-shaped dipole polarization layer that forms a partial or complete coating layer on the surface of an inorganic semiconductor light absorber that receives solar light and generates photoelectrons and light holes, and a metal oxide electron transporter. to be. The optoelectronic device according to the present invention is capable of effectively transferring a charge carrier generated from an inorganic semiconductor light absorber to a metal oxide electron transport, and thus has a feature of manufacturing a highly efficient optoelectronic device.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180082183-A
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