| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cf213be03285a0b93967ae2fd2fd351a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00 |
| filingDate |
2011-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e22d38558384be17b04d56c2e4983c2d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27e9fa49d959c3ae6b709022dcad28c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac0fb3fb236635529c2ac697f99a6076
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35e65f8316cd2e70f14e833994cd0880 |
| publicationDate |
2012-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20120140481-A |
| titleOfInvention |
Metal wiring etchant and manufacturing method of liquid crystal display device using the same |
| abstract |
Disclosed are a metal film etching liquid composition including copper used in a semiconductor device and an etching method using the same. The metal film etchant composition of the present invention includes boron fluoride or boric fluoride and at least one fluorine-containing compound. The etching method of the metal film containing copper using the etchant composition according to the present invention not only does not damage the glass substrate at the time of etching, but also the copper-containing multilayer metal film can be etched collectively to improve the production yield of the semiconductor device. You can. The etching liquid composition and the etching method using the same of the present invention can prevent data open defects due to step and erosion by not using sulfate, and also prevent the precipitation problem with metal salt because etching is possible without using an organic acid. There is an advantage that can be solved and finer pattern. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170079522-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150045548-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9127368-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150052396-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018164535-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11584683-B2 |
| priorityDate |
2011-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |