http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120132394-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-363 |
| filingDate | 2012-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20120132394-A |
| titleOfInvention | Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device |
| abstract | Transistors using oxide semiconductors are sometimes less reliable than transistors using amorphous silicon. Therefore, a semiconductor device having a transistor using an oxide semiconductor with high reliability is provided. Impurities, such as hydrogen, nitrogen, and carbon, included in the oxide semiconductor film become a factor of lowering the semiconductor characteristics of the oxide semiconductor film. For example, hydrogen and nitrogen contained in the oxide semiconductor film are factors that shift the threshold voltage of the transistor using the oxide semiconductor film in the negative direction. In addition, nitrogen, carbon, and rare gas contained in the oxide semiconductor film inhibit the formation of crystal regions in the oxide semiconductor film. Therefore, the transistor with high reliability is manufactured by reducing the impurity concentration of an oxide semiconductor film. |
| priorityDate | 2011-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.