http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120131813-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2011-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20120131813-A |
| titleOfInvention | Manufacturing Method of Semiconductor Device |
| abstract | A method of manufacturing a semiconductor device having improved NBTI life characteristics is provided. In the method of manufacturing the semiconductor device, a first insulating film is formed on a substrate, nitrogen is first injected into the first insulating film to form a second insulating film, and the first and second heat treatments are sequentially performed on the second insulating film. To form a third insulating film, wherein the first heat treatment is performed at a first temperature and a first gas atmosphere, and the second heat treatment is a second temperature higher than the first temperature and a second different from the first gas atmosphere. In a gas atmosphere, a second insulating film is formed by injecting nitrogen into the third insulating film to form a fourth insulating film, and the fourth insulating film is sequentially subjected to third and fourth heat treatments to form a fifth insulating film. The heat treatment may be performed in a third temperature and a third gas atmosphere higher than the first temperature, and the fourth heat treatment may be performed in a fourth temperature higher than the second temperature and in a fourth gas atmosphere different from the third gas. The. |
| priorityDate | 2011-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.