http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120129795-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2012-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20120129795-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | PURPOSE: A method of manufacturing a semiconductor device is provided to implement stable electrical characteristic by forming an oxide aluminum film on a crystalline oxide semiconductor film to prevent oxygen from being discharged from the crystalline oxide semiconductor layer in a heating process. CONSTITUTION: An amorphous oxide semiconductor film(491) is formed between an insulating layer(407) and an oxide aluminum film. A heating process is performed on the amorphous oxide semiconductor film to form a crystalline oxide semiconductor film(403). The crystalline oxide semiconductor is doped with oxygen to form the amorphous oxide semiconductor film containing excessive oxygen. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210094500-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190059979-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11411120-B2 |
| priorityDate | 2011-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 69.