| abstract |
An insulating film having characteristics of low dielectric constant, low etching rate, and high insulating property is formed. Performing this set a predetermined number of times by supplying a predetermined element-containing gas to a substrate, supplying a carbon-containing gas to the substrate, and supplying a nitrogen-containing gas to the substrate as one set. Forming a carbonitride layer on the substrate; And forming an oxynitride layer by oxidizing the carbonitride layer to form an oxynitride layer by supplying an oxygen-containing gas to the substrate. do. |