http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120124919-A

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filingDate 2011-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2012-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20120124919-A
titleOfInvention Etch composition of copper / molybdenum film or molybdenum / copper / molybdenum triple film without glass damage
abstract Photoresist is coated and exposed on a metal wiring material for gate, source, and drain electrodes constituting the TFT (Thin Film Transitor) of the liquid crystal display device, and then etched to desired pattern. An etching composition for a thin film transistor liquid crystal display device is disclosed. Such an etching composition is based on the total weight of the composition, 5 to 20% by weight of hydrogen peroxide, 0.1 to 5% by weight of etchants, 0.1 to 5% by weight of chelating agents, 0.1 to 5% by weight of ammonium compounds, 0.01 to 2 azole compounds Water is included so that the weight percent and total weight are 100 weight percent. The pH of this etching composition is adjusted to 1.0 to 3.5. According to the present invention, not only is it possible to collectively etch a copper / molybdenum film or a molybdenum / copper / molybdenum triple layer, but also eliminate the possibility of defects caused by etching of the glass substrate by fluoride. It does not occur and has a suitable etching rate, a suitable etching amount and an appropriate taper angle for the process.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9164339-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150060355-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180120350-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160002312-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9771550-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190106475-A
priorityDate 2011-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 80.