| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7926
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-448 |
| filingDate |
2012-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2012-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20120122887-A |
| titleOfInvention |
Method for forming oxide layer and method for manufacturing semiconductor device comprising same |
| abstract |
The present invention comprises forming a layer of reaction inhibitory functions on the substrate surface; Forming a layer of a metal precursor or a semiconductor precursor over the layer of reaction inhibiting functionalities; And oxidizing the metal precursor or the semiconductor precursor to obtain a layer of the metal oxide or the semiconductor oxide. By using the oxide layer formation method of the present invention concept, it is possible to form an oxide layer having excellent step coverage and to produce a semiconductor device having excellent electrical characteristics. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190085630-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10468256-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11739422-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10468264-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9437420-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11411069-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10103026-B2 |
| priorityDate |
2011-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |