http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120121113-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022483 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022466 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 |
| filingDate | 2011-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20120121113-A |
| titleOfInvention | Manufacturing method of Solar cell |
| abstract | PURPOSE: A manufacturing method for a solar cell is provided to reduce processing costs by using a zinc oxide made by a printing method as a transparent electrode plate. CONSTITUTION: An n-type or p-type quantum dot solution is coated on the top of a transparent electrode. The transparent electrode is selected from a zinc oxide, an ITO(Indium-Tin Oxide) transparent electrode, a FTO(Fluorine Tin Oxide) transparent electrode, a polymer transparent electrode, a graphene transparent electrode, and a CNT(Carbon Nanotube) transparent electrode. The p-type or n-type quantum dot solution which is opposite to the p-type quantum dot solution is coated on the top of a coating surface. An electrode is coated. The n-type quantum dot solution is manufactured by dispersing 10-30mg per 1ml of a zinc oxide nano particle into a solvent. An average particle diameter of the zinc oxide nano particle is 1-10nm. [Reference numerals] (AA,HH) Transparent electrode; (BB) N or P type quantum dot coating; (CC) P or N type quantum dot coating; (DD) Electrode coating; (EE) Electrode; (FF) P or N type semiconductor; (GG) N or P type semiconductor |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101489776-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101690191-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102041382-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101328477-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10714648-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3196946-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105118887-A |
| priorityDate | 2011-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.