http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120120064-A
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate | 2012-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2012-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20120120064-A |
titleOfInvention | Semiconductor device and method of manufacturing semiconductor device |
abstract | Industrial Applicability The present invention provides stable electrical properties and high reliability in a semiconductor device using an oxide semiconductor that has achieved miniaturization and high integration, and a semiconductor device manufacturing process. Moreover, the manufacturing process of the said semiconductor device WHEREIN: The technique which suppresses a defect and manufactures with high yield is provided. In a semiconductor device having a transistor including an oxide semiconductor film, an oxide semiconductor film is formed in a trench formed in an insulating layer. The trench includes a lower corner portion and an upper corner portion in a curved state having a curvature radius of 20 nm or more and 60 nm or less, and the oxide semiconductor film is formed in contact with the bottom surface, the lower corner portion, the upper corner portion, and the inner wall surface of the trench. The oxide semiconductor film is an oxide semiconductor film containing a crystal having a c-axis that is approximately perpendicular to the surface at least in the upper corner portion. |
priorityDate | 2011-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.