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filingDate 2011-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15e9d9fa1562440a2042c164f53d16af
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publicationDate 2012-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20120117577-A
titleOfInvention Aluminum-deficient α-SiA ION ON-based phosphor, method for manufacturing the same, and LED chip package using the same
abstract A method for producing α-SiAlON phosphor, an α-SiAlON phosphor manufactured by the method, and an LED chip package using the same are disclosed. Α-SiAlON-based phosphor manufacturing method according to the invention is (a) Ca 0.8-x Re x Al ay Si 12-y O 1.2 N 14.8 (Re is rare earth element, 0≤x≤0.2, 2.6≤y≤3.0, 0.7 Weighing ≦ a ≦ 0.9) and then mixing; And (b) sintering the mixed raw materials by normal pressure sintering to prepare a phosphor having a Ca 0.8-x Re x Al ay Si 12-y O 1.2 N 14.8 structure. It features.
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priorityDate 2011-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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