http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120117528-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7f7a2247c65f948d2c568dd93ca3e083
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-641
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-644
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36
filingDate 2011-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_336240b9595ba7f94be6d3c7592b6482
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b48e1613984624cd5092f62199577715
publicationDate 2012-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20120117528-A
titleOfInvention Vertical LED element and manufacturing method thereof
abstract BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical LED device and a method of manufacturing the same, wherein a p-type gallium nitride-based semiconductor layer (p-GaN layer), an active layer, and an n-type gallium nitride-based semiconductor layer (n-GaN layer) are sequentially stacked Structure, p-type electrode formed on p-GaN layer of light emitting structure, seed layer formed to cover side and p-type electrode of light emitting structure, n-type electrode and seed layer formed on n-GaN layer of light emitting structure The heat dissipation efficiency may be improved by including a metal layer formed on the pattern.
priorityDate 2011-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID117559
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559169

Total number of triples: 18.