| abstract |
An embodiment of the present invention discloses an amorphous oxide thin film transistor, a method of forming the same, and a display panel using the same. The amorphous oxide thin film transistor includes a gate electrode, a gate insulating layer, a semiconductor active layer, and a source and a drain electrode, the semiconductor active layer includes a channel layer and an ohmic contact layer, the channel layer has a higher oxygen content than the ohmic contact layer, and the channel The layer is in contact with the gate insulating layer, the ohmic contact layer is divided into two independent ohmic contact regions, one of the two independent ohmic contact regions is in contact with the drain electrode and the other. |