| abstract |
Ion implantation systems and methods use dopant gas supplies to prevent heating and decomposition of the dopant gas by arc chamber heat generation using, for example, boron source materials such as other alternatives to B 2 F 4 or BF 3 . Provide cooling of the dopant gas in the line. Various arc chamber thermal management devices, as well as plasma characteristics, specific flow devices, cleaning processes, power management, balance shifting, optimization of extraction optics, detection of deposits in the flow path, and sources to achieve efficient operation of the ion implantation system. Changes in life optimization are described. |