http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120103396-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d0693ed4f2b7b1fab97515ac2f1f311c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 2011-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69d1e587b4487047d4be947604d80bc9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f637d9089b2fe107823f49718a24d274 |
| publicationDate | 2012-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20120103396-A |
| titleOfInvention | 3D complementary metal oxide semiconductor device |
| abstract | The three-dimensional complementary metal oxide semiconductor includes a lower wafer having a first type displaced MOS transistor; A displaced MOS transistor of the second type arranged to face the displaced MOS transistor of the first type, and also having a plurality of metal pads and a plurality of TSVs connected to the metal pads. An upper wafer stacked side-to-side or face-to-back; And a hybrid bonding layer arranged between the lower wafer and the upper wafer and having a plurality of metal bonding regions and non-metal bonding strength. |
| priorityDate | 2011-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.