http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120098095-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c63bc5ef3ae590b0603de4587961cac3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 2011-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7be97cedac2022f3dbb60dcc165d314e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cec497c6b7677b629a6de60523e84a18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd76cc7bbb68922dffca36d34f83aaf0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6743e70887157e0b86482804d079fe15 |
| publicationDate | 2012-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20120098095-A |
| titleOfInvention | Semiconductor device manufacturing method |
| abstract | The present invention provides a method for manufacturing a semiconductor device that can prevent a bridge due to loss of an interlayer insulating film in a subsequent cleaning process, the method of manufacturing a semiconductor device of the present invention comprises the steps of forming a plurality of patterns on a substrate; Forming an interlayer insulating film containing gaps between the patterns and phosphorus as an impurity; Etching the interlayer insulating layer to form a contact hole; A pretreatment step of reducing the concentration of the impurities on the surface of the interlayer insulating film including the sidewalls of the contact holes; And cleaning the contact hole, and the present invention described above includes pretreatment using a pretreatment solution when the insulating films BPSG and PSG are exposed during the formation of via holes, contact holes, etc. of the semiconductor device. This can lead to densification, thereby minimizing losses in subsequent cleaning processes, thereby reducing the frequency of bridges and defects. |
| priorityDate | 2011-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.