http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120094154-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_781c429e4e20536916ff74dcbe1b5417 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-495 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-495 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B9-228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22C28-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B59-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
| filingDate | 2008-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d7a4208822824bfd4bef74e0240e986 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff0ccb01a0e01c3e4747d06c4e9fd40b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fd5b4d51d25d68e58c70dfda353f4b1 |
| publicationDate | 2012-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20120094154-A |
| titleOfInvention | Sputtering target composed of high purity lanthanum, high purity lanthanum and metal gate film mainly composed of high purity lanthanum |
| abstract | High purity lanthanum, except for rare earth elements and gas components, and high purity lanthanum, characterized in that each of aluminum, iron, and copper in lanthanum is 100 wtppm or less, and 4N or more except for rare earth elements and gas components. 100 wtppm or less of aluminum, iron and copper, 1500 wtppm or less of oxygen, 1 wtppm or less of each element of alkali metal and alkaline earth metal, and 10 wtppm or less of each element of transition metal and high melting point metal other than the above , High purity lanthanum, characterized in that each radioactive element is 10 wtppb or less. It is an object of the present invention to provide a technology capable of efficiently and stably providing a thin film for metal gates containing a high purity lanthanum, a sputtering target made of high purity lanthanum, and a high purity lanthanum as a main component. |
| priorityDate | 2007-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.