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filingDate 2011-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4489d016dab88e925d42201ae31c294b
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publicationDate 2012-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20120093630-A
titleOfInvention DNA sensor and manufacturing method using organic thin film transistor
abstract Provided are a DNA sensor and a manufacturing method using an organic thin film transistor. The DNA sensor includes a gate electrode formed on the substrate; A gate insulator formed on the gate electrode; A source electrode and a drain electrode formed on the gate insulator; A transistor channel formed between the source electrode and the drain electrode; And a DNA probe layer formed on the transistor channel. According to the present invention, by forming the probe DNA in the organic thin film transistor, the user can quickly detect the material, it is possible to prevent the contamination problem that may occur when the probe DNA binding by the user.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150144644-A
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type http://data.epo.org/linked-data/def/patent/Publication

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