http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120093374-A

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filingDate 2008-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16ff10618b4d9049d2579c564e239612
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publicationDate 2012-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20120093374-A
titleOfInvention Trichlorosilane Manufacturing Method
abstract Hydrogen chloride, metal or chemical grade silicon raw materials, contaminated by-products of primary reaction products And / or a process for producing high purity trichlorosilane (TCS) using by-products of the improved Siemens process. By-products of the improved Siemens process include "impurity" TCS containing low boiling impurities such as dichlorosilane (DCS) and "impurity" STCs containing high boiling impurities. "Impurity" STC is first purified and partly reacted with "impurity" TCS, including DCS, to produce additional TCS feedstock for the TCS purification process. Another portion of the purified STC is hydrogenated and subjected to the TCS purification process. It is converted back to TCS, which provides another feedstock. The overall net yield of the high purity TCS produced is an increase over proven practices.
priorityDate 2007-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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