| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-6562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2237-365
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2237-083 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B37-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B37-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-571
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B37-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-573 |
| filingDate |
2010-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eedbcdd12a66de744f8d95097a86d2cb |
| publicationDate |
2012-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20120093274-A |
| titleOfInvention |
Silicon Carbide Bonding Method and Silicon Carbide Bonding Method |
| abstract |
The present invention provides a high purity silicon carbide conjugate excellent in heat resistance and a method for producing the same. Provided is a silicon carbide assembly comprising a high purity silicon carbide bonding layer provided between a silicon carbide member and a separate silicon carbide member. The said bonded body is obtained by interposing curable silicone composition between two silicon carbide members, hardening | curing the hardened | cured material layer obtained by hardening in a non-oxidizing atmosphere, adding to silicon carbide, and joining. The conjugate is excellent in heat resistance and high in purity. |
| priorityDate |
2009-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |