http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120091138-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcc0b66123940d1b32783569ebfa2d45 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K5-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K5-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L83-04 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-04 |
filingDate | 2010-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f45ea5312ac5cbb4cae0db2928c4f80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_587775c2e54656b916ab8a22c9214dee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_424dbfcbafed8efc707b021e4a23ab93 |
publicationDate | 2012-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20120091138-A |
titleOfInvention | Inversion pattern formation method and polysiloxane resin composition |
abstract | The present invention is not mixed with a mask pattern formed on a substrate to be processed, but can be satisfactorily embedded in a gap of the mask pattern, and has a polysiloxane resin composition for forming a reverse pattern excellent in dry etching resistance and storage stability, and a reverse pattern using the same. It aims at providing a formation method. The present invention provides a mask pattern forming process for forming a mask pattern on a substrate to be processed, (2) a embedding process for embedding a polysiloxane resin composition in a gap between the mask patterns, and (3) removing and inverting the mask pattern. It is an inversion pattern formation method which has a inversion pattern formation process which forms a pattern, The said polysiloxane resin composition contains [A] polysiloxane which has a specific structure, and [B] organic solvent which has a specific structure, The inversion pattern formation method characterized by the above-mentioned. to be. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160087092-A |
priorityDate | 2009-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 830.