| abstract |
Provided are an interconnect structure of an integrated circuit for copper wiring in an integrated circuit and a method of manufacturing the same. The Mn, Cr or V containing layer forms a barrier against copper diffused from the wiring, thereby protecting the insulator from cracks earlier than normal and protecting the transistor from deterioration by copper. In addition, the Mn, Cr or V containing layer promotes strong adhesion between copper and insulators, not only to protect against defects caused by electron transfer of copper during use of the device, but also to protect copper from corrosion by surrounding oxygen or water, Maintain the mechanical integrity of the device during manufacture and use. In forming such integrated circuits, one embodiment of the present invention provides for the selective deposition of Mn, Cr, V or Co on copper surfaces while reducing or even inhibiting the deposition of Mn, Cr, V or Co on insulator surfaces. Provide a method. Deposition by catalyst of copper using Mn, Cr or V containing precursors and iodine or bromine containing precursors is also provided. |