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filingDate 2011-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d34e6971e5b2f9ae0af3dc9954ec1b07
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publicationDate 2012-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20120083829-A
titleOfInvention Etch Resonance Energy Transfer Light Emitting Diode
abstract BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to resonance energy transfer (FRET) light emitting diodes (LEDs), which form holes of several micrometers to several tens of nanometers on the surface of an LED and uniformly apply semiconductor quantum dots therein. The present invention relates to an LED that emits white light. According to the present invention, when the semiconductor quantum dot is approached within several nanometers from the LED active layer, the electron-electron coupling energy that disappears in a non-radiative manner within the active layer is transferred to the quantum dot to increase the energy conversion efficiency of the LED, and excellent in the semiconductor quantum dot. Color reproduction has the effect of generating light close to the ideal white light.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112038454-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110379899-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106653967-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170044316-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110808315-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9159874-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111200043-B
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priorityDate 2011-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.