| abstract |
In particular, the present invention is capable of reducing the reflectance (having an optimum n value and k value as an antireflection film) as an underlayer film for a three-layer resist process, and having excellent embedding characteristics, high pattern bending resistance, and especially than 60 nm. An object of the present invention is to provide a resist underlayer film material capable of forming an underlayer film which does not cause collapse or distortion of a line after etching in a thin high vertical line, and a pattern forming method using the same. At least one or more compounds represented by the following general formulas (1-1) and / or (1-2), one or more compounds represented by the following general formulas (2-1) and / or (2-2), and / Or a polymer obtained by condensing the equivalent thereof. |