| abstract |
The present invention relates to a method for manufacturing a light emitting diode comprising the following steps:-providing a carrier substrate (1) having a silicon surface (1a),-a continuous layer on said silicon surface (1a) Depositing (100) in the growth direction (R), and-depositing a light emitting diode structure (16) on the continuous layer (100), wherein the continuous layer (100) is GaN formed by gallium nitride -Layer 5, said continuous layer comprising a masking layer 12 formed by silicon nitride, and said masking layer 12 being at least GaN-layer 5 in said growth direction R; ) Is placed after the part. |