| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1584c21cf27f9e557aec39240422a393 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-249953
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-045 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-02 |
| filingDate |
2012-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef1a67d9f350d00837b78cd71b0bbdbc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a4384a7a7a15b2f0154bb44f4518cf1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78878c09fbf0245a823773c2640f0fa9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_681c53d9b43257709b5b03845279b103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d237d8ab0dee3868944f88c02997a1d1 |
| publicationDate |
2012-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20120080157-A |
| titleOfInvention |
Manufacturing method of ultra low dielectric film |
| abstract |
The present invention optimizes the ratio of a mixed solution having a pore-forming agent represented by the formula (1) and a polymethylsilsesquioxane copolymer as a matrix, and here, a method for producing an ultra low dielectric film which undergoes ultraviolet curing during heat treatment, and an ultra low dielectric film thereby It is about. The ultra-low dielectric film according to the present invention is uniformly distributed with 10 to 30% of pores of 1 to 3 nm, and achieves a very high mechanical modulus of 10.5 to 19 GPa at a low dielectric constant of 2.12 to 2.4, thus replacing the SiO2 dielectric film currently used. It can be used as an interlayer insulating film of a semiconductor. |
| priorityDate |
2009-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |