| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9470e16255fa466d00a653ad3a650b96 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-49107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48257 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-48 |
| filingDate |
2010-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b995e5b0d708b60ebcdc922d02a7fe2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12fab461bb24f43ceebe04395d786727
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0578ddfd5bf15fa9d0038683e3d1d3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3501e5eb1f8aa6982badbb3cb79820d7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0950491fd0f2dcaffd19c16ac5075a5c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7297ae5cbb19383c548cf8ff6dbcf5d9 |
| publicationDate |
2012-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20120078386-A |
| titleOfInvention |
Light Emitting Diode and Light Emitting Diode Package with Current Stopping Layer |
| abstract |
The technical idea of the present invention is to provide a light emitting diode and a light emitting diode package having a current blocking layer that can reduce current concentration by forming a current blocking layer under the electrode, thereby improving external quantum efficiency. In accordance with an aspect of the present invention, a light emitting diode includes: a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and having a mesa region; A first electrode electrically connected to the first conductivity type semiconductor layer and positioned to be spaced apart from the mesa region; A second electrode electrically connected to the second conductive semiconductor layer; And a current blocking layer including a first region positioned at the gap so that the current can be dispersed without being concentrated around the first electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015068912-A1 |
| priorityDate |
2010-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |