http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120077189-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f517051dd4d265e5e931724f45b34ddc |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2010-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f7de7efe4296c1dc50a6507984e99a5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f6f237a1a06a93e172a08815113942a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5038313144fbfe3336a3988c6295cffd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1594d9e118802a0146bf972a13ec449 |
| publicationDate | 2012-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20120077189-A |
| titleOfInvention | Chemical Mechanical Polishing Slurry Composition and Method of Manufacturing Semiconductor Device |
| abstract | The present invention relates to a chemical mechanical polishing slurry composition and a method for manufacturing a semiconductor device, the cerium oxide 0.01 to 5% by weight, amino sulfonic acid 0.001 to 10% by weight, the compound comprising a carboxyl group and a hydroxyl group 0.001 to 10% by weight, and the rest Content of solvent, the zeta potential value being positive in the range of pH 1-7. The chemical mechanical polishing slurry composition can quickly polish a pattern wafer having an uneven portion having a large step during fabrication of a semiconductor device in a small amount, and the removal rate of the silicon nitride film is maintained at an extremely low level so that the selectivity of polishing the silicon oxide film and the silicon nitride film is maintained. It can be used for the required process. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015528036-A |
| priorityDate | 2010-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 89.