| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2011-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a983d8c12d9fa2e0546cdfc44737befb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d08bfbb914272a63018aee5ccc2bbb8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45f251a01d70f4bf45a00b0321ebb56c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_926b08cd2f1681877250ba029f56b2fb |
| publicationDate |
2012-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20120073131-A |
| titleOfInvention |
Positive resist composition, pattern formation method |
| abstract |
An object of the present invention is to reduce the chemical flare by suppressing the volatilization of the resist composition, such as generated acid and quencher while achieving both low diffusion and high dissolution contrast, and to improve DOF and roundness or LWR of hole patterns and trench patterns. It is done. A polymer compound having a repeating unit (a1) which generates an acid having a structure represented by the following formula (1) and an acid labile repeating unit (a2) as a result of being sensitive to at least (A) high energy ray, and whose alkali solubility is changed by the acid. And (B) is a positive resist composition comprising a sulfonic acid onium salt represented by the following formula (2) together. <Formula 1> <Formula 2> |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200107863-A |
| priorityDate |
2010-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |