http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120071625-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cbffa3b81b3b862dc7220b5648f5f745 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 |
filingDate | 2010-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9a8c75c61b7ddbacfc3a529898e553a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_595701992021fadd402b2b0eea839ebb |
publicationDate | 2012-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20120071625-A |
titleOfInvention | An organic vapor phase jet printing apparatus for manufacturing a high performance organic thin film transistor, a method of manufacturing a high performance organic thin film transistor, and a high performance organic thin film transistor manufactured using the same. |
abstract | The present invention provides an organic vapor phase jet printing apparatus for manufacturing a high performance organic thin film transistor, a method for manufacturing an organic thin film transistor using the same, and a high performance organic thin film transistor manufactured using the same, in the method of manufacturing an organic thin film transistor. (A) controlling the flow rate of the organic semiconductor material and the dopant material in the vapor state present in each storage chamber into the mixing chamber, and (B) the organic semiconductor material and the plate material in the vapor state in the mixing chamber. And spraying a jet material or a mixed material thereof in a jet state by moving a nozzle of the mixing chamber and adjusting a doping concentration, wherein the organic semiconductor layer and the source are prepared by the steps (A) and (B). The organic layer is formed between the electrodes and between the organic semiconductor layer and the drain electrode, an injection layer which is a locally doped organic semiconductor layer. A method of manufacturing an organic thin film transistor using a vapor phase jet printing apparatus, and an organic vapor phase jet printing apparatus used therefor, and an organic thin film transistor manufactured through the same, according to the present invention, between the source electrode and the organic semiconductor layer, In the junction between the drain electrode and the organic semiconductor layer, the contact resistance and the injection energy barrier can be minimized, the driving voltage can be effectively reduced, and the organic thin film transistor can be manufactured with a significant improvement in power efficiency. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016010332-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9997709-B2 |
priorityDate | 2010-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.