| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78678 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00 |
| filingDate |
2012-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aff0bb93c6b0ff0b2e00f58795979679
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7e0e4469b65153e12d7642fee00b953 |
| publicationDate |
2012-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20120071374-A |
| titleOfInvention |
Electronic device, semiconductor device and manufacturing method thereof |
| abstract |
The present invention provides a fabrication process using a droplet ejection method suitable for fabricating large substrates in mass production. A source wiring having a pattern finer than the pattern after discharge, leaving only the area exposed by the laser light by selectively discharging the photosensitive conductive film material liquid by the droplet discharging method, and selectively exposing it with the laser light, and then developing or etching; Drain wiring is realized. One characteristic of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-shaped semiconductor layer and overlap with the semiconductor layer. |
| priorityDate |
2005-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |