http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120070597-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc3e639586089fe232d0cfb27383c875 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B5-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 |
| filingDate | 2010-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c81eab7a98cf6535761e10acd326429 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a40e49f2d0b502e62f78598ae66666bd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f161c825f4f48faf2be58236b7e94be http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b165c673b1842b38f854322b2708033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed842c37f464a1f79c3d8b3ddbe98cc7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc03657e04998597e25939a638176bfc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5725efa23c89208075736d18075c1a0 |
| publicationDate | 2012-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20120070597-A |
| titleOfInvention | The manufacturing method of a transparent conductive film, the manufacturing apparatus of a transparent conductive film, a sputtering target, and a transparent conductive film |
| abstract | [PROBLEMS] To provide a method for producing a transparent conductive film capable of forming a transparent conductive film having good etching characteristics and conductive characteristics without using water vapor. SOLUTION The manufacturing method of the transparent conductive film which concerns on one form of this invention is the 1st component which consists of indium oxide, the 2nd component which consists of tin oxide, and La, Nd, Dy, Eu, Gd, Tb. Sputtering a target material comprising at least one element selected from Zr, Al, Si, Ti, and B or an oxide thereof, to form an indium tin oxide thin film on a substrate; And a step of patterning the indium tin oxide thin film with an etching solution and a step of crystallizing the indium tin oxide thin film by heat treatment. As a result, the ITO film immediately after film formation can be etched with weak acid, and the desired conductive properties can be imparted to the ITO film. |
| priorityDate | 2009-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 61.