http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120067056-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d0fc2b70675ee19bd5fc464f5ae9061 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42 |
| filingDate | 2010-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5aff8b8a07d3c3d6c58879ccf9785d77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac11cded0b47d904a0283dc83a0dc23e |
| publicationDate | 2012-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20120067056-A |
| titleOfInvention | A semiconductor light emitting device comprising a transparent electrode layer doped with a fluorine-based material and a method of manufacturing the same |
| abstract | The present invention discloses a semiconductor light emitting device having a transparent electrode layer doped with a fluorine-based material and a method of manufacturing the same. According to the present invention, the TCO material forming the transparent electrode layer is reacted with a fluorine-based material in a plasma state to be doped with a fluorine-based material, thereby increasing the work function of the transparent electrode layer, thereby reducing the height of the Schottky barrier with the nitride layer in contact with the transparent electrode layer. By reducing the contact resistance between the transparent electrode layer and the nitride layer, the current injection efficiency into the nitride layer can be improved. In particular, in the case of a UV semiconductor light emitting device, when Al or the like is doped into the nitride layer including the active layer in order to generate light in the ultraviolet region, the height of the schottky barrier between the transparent electrode layer and the nitride layer is further increased, thereby increasing the contact resistance. Due to this, there is a problem that the light efficiency is lowered, but the present invention increases the work function of the transparent electrode layer by doping the transparent electrode layer with a fluorine-based material, thereby reducing the height of the schottky barrier with the nitride layer in contact with the transparent electrode layer. Therefore, by reducing the contact resistance between the transparent electrode layer and the nitride layer, by improving the electrical and optical properties of the transparent electrode layer, it is possible to improve the current injection efficiency in the UV semiconductor light emitting device and the light transmittance in the ultraviolet region. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023022268-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8969110-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017188578-A1 |
| priorityDate | 2010-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.